SCANNING PHOTO-VOLTAGE INVESTIGATION OF SILICON-BASED AND GAAS-BASED MOS CAPACITORS

被引:2
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作者
STREEVER, RL
WINTER, JJ
机构
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D O I
10.1016/0040-6090(80)90198-4
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T [工业技术];
学科分类号
08 ;
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页码:7 / 15
页数:9
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