SCANNING PHOTO-VOLTAGE INVESTIGATION OF SILICON-BASED AND GAAS-BASED MOS CAPACITORS

被引：2
|
作者：
STREEVER, RL
WINTER, JJ
机构：
来源：
THIN SOLID FILMS | 1980年 / 69卷 / 01期
关键词：
D O I：
10.1016/0040-6090(80)90198-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7 / 15
页数：9
相关论文
共 50 条
  • [1] AN INVESTIGATION OF BARRIERS USING THE PHOTO-VOLTAGE FOR MOS STRUCTURES BASED ON HGCDTE
    ANTONOV, VV
    VOITSEKHOVSKII, AV
    KAZAK, EP
    LANSKAYA, OG
    PLOMIPU, BG
    SOVIET MICROELECTRONICS, 1982, 11 (01): : 46 - 49
  • [2] Study of 980 nm GaAs based pumping lasers by photo-voltage spectroscopy
    Udhayasankar, M
    Dellagiovanna, M
    Morasca, S
    Stella, A
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 597 - 599
  • [3] INVESTIGATION OF LATERAL NONUNIFORMITIES IN MOS STRUCTURES BY THE SURFACE PHOTO-VOLTAGE TECHNIQUE
    KRAWCZYK, SK
    JAKUBOWSKI, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : K149 - K153
  • [4] PHOTO-VOLTAGE SPECTROSCOPY OF FAST SURFACE-STATES IN SILICON MOS STRUCTURES
    SEILENTHAL, M
    REBANE, KS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (01): : K121 - K123
  • [5] Silicon-based photo-voltaic cells with stabilized voltage
    Bakhadyrkhanov, MK
    Iliev, KM
    Tachilin, SA
    ZHURNAL TEKHNICHESKOI FIZIKI, 1997, 67 (02): : 141 - 142
  • [6] MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON ON SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS
    LAGOWSKI, J
    JASTRZEBSKI, L
    CULLEN, GW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2609 - 2613
  • [7] MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS
    JASTRZEBSKI, L
    CULLEN, GW
    LAGOWSKI, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C101 - C101
  • [8] Design and Fabrication of the Silicon-based Integrated MIM Capacitors
    Zhang, Rongzhen
    Zhang, Qing
    Zhou, Xiufeng
    Zhu, Yetao
    Ming, Xuefei
    Gao, Nayan
    2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, : 280 - 283
  • [9] Extraction technique of trap states based on transient photo-voltage measurement
    Lin, Zedong
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [10] Extraction technique of trap states based on transient photo-voltage measurement
    Zedong Lin
    Scientific Reports, 10
12345