PROBLEM OF THE SPECTRUM OF DEEP LEVELS CREATED BY ALPHA-PARTICLES IN SILICON RADIATION DETECTORS

An investigation was made of radiation defects generated by alpha-irradiation of silicon radiation detectors made of a material grown by the Czochralski method or by the floating molten-zone method. A comparison was made of the results of electron and alpha-particle irradiation, and also of the effects of different alpha-particle doses and energies. The common origin of the centers which had a level in the lower half of the band gap immediately after alpha-irradiation was identified and the unstable nature of these centers at room temperature was noted. The influence of heat treatments on the spectrum of radiation defects in silicon was demonstrated.