共 50 条
- [1] Critical thickness of heavily boron-doped silicon-germanium alloysAPPLIED PHYSICS LETTERS, 2006, 89 (20)Chopra, SaurabhOzturk, Mehmet C.Misra, VeenaMcGuire, KrisMcNeil, L. E.
- [2] PRECIPITATION OF DOPANTS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYSBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (01): : 155 - &BURGESS, ELNASBY, RD
- [3] PRECIPITATION OF DOPANTS IN SILICON-GERMANIUM THERMOELECTRIC ALLOYSJOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2908 - &NASBY, RDBURGESS, EL
- [4] AMORPHOUS SILICON-GERMANIUM ALLOYSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C444 - C444WAGNER, S
- [5] OXIDATION OF SILICON-GERMANIUM ALLOYSJOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 288 - +MARGALIT, SBARLEV, AAHARONI, HNEUGROSCHEL, AKUPER, AB
- [6] PHONON-SCATTERING AT GRAIN-BOUNDARIES IN HEAVILY DOPED FINE-GRAINED SILICON-GERMANIUM ALLOYSNATURE, 1981, 290 (5809) : 765 - 766ROWE, DMSHUKLA, VSSAVVIDES, N
- [7] ELECTRICAL-PROPERTIES OF HEAVILY-DOPED POLYCRYSTALLINE SILICON-GERMANIUM FILMSIEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) : 228 - 232KING, TJMCVITTIE, JPSARASWAT, KCPFIESTER, JR
- [8] REACTION OF TITANIUM WITH GERMANIUM AND SILICON-GERMANIUM ALLOYSAPPLIED PHYSICS LETTERS, 1989, 54 (03) : 228 - 230THOMAS, ODELAGE, SDHEURLE, FMSCILLA, G
- [9] Electrochemical capacitance voltage measurements in highly doped silicon and silicon-germanium alloysJOURNAL OF APPLIED PHYSICS, 2016, 119 (15)Sermage, B.Essa, Z.Taleb, N.Quillec, M.Aubin, J.Hartmann, J. M.Veillerot, M.