A 2-TEMPERATURE TECHNIQUE FOR PECVD DEPOSITION OF SILICON DIOXIDE

被引：9
|
作者：
HERMAN, JS
TERRY, FL
机构：
[1] Center for High Frequency Microelectronics, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 05期
关键词：
D O I：
10.1109/55.79568
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new technique has been developed and analyzed for plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide films which yields lower interface trap densities. First, a thin cap layer is deposited at a low temperature and the film is subjected to an in-situ hydrogen plasma treatment. Then the temperature is raised to the final value and the deposition continued to the desired thickness.
引用
收藏
页码：236 / 237
页数：2
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