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INDIUM-PHOSPHIDE ON GALLIUM-ARSENIDE HETEROEPITAXY WITH INTERFACE LAYER GROWN BY FLOW-RATE MODULATION EPITAXY
被引:12
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作者
:
CHEN, WK
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0
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0
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0
CHEN, WK
CHEN, JF
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0
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0
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CHEN, JF
CHEN, JC
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0
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0
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0
CHEN, JC
KIM, HM
论文数:
0
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0
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0
KIM, HM
ANTHONY, L
论文数:
0
引用数:
0
h-index:
0
ANTHONY, L
WIE, CR
论文数:
0
引用数:
0
h-index:
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WIE, CR
LIU, PL
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0
引用数:
0
h-index:
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LIU, PL
机构
:
来源
:
APPLIED PHYSICS LETTERS
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1989年
/ 55卷
/ 08期
关键词
:
D O I
:
10.1063/1.101795
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:749 / 751
页数:3
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