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- [21] INFLUENCE OF THE DOPANT PROFILE OF AN N+-N-P+ STRUCTURE ON THE CURRENT-VOLTAGE CHARACTERISTIC IN THE BREAKDOWN REGION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (01): : 90 - 92
- [22] EFFECT OF RECOMBINATION LEAKAGE ON CURRENT-VOLTAGE CHARACTERISTIC OF AN N-P-I STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 994 - &
- [23] CURRENT-VOLTAGE CHARACTERISTIC OF A P-I-N STRUCTURE MADE OF COMPENSATED SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 262 - 265
- [24] CURRENT-VOLTAGE CHARACTERISTIC OF A MICROPLASMA IN A GERMANIUM P-N-JUNCTION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (03): : 480 - +
- [25] 2-ELECTRODE N-P-I-STRUCTURE WITH N-MODE CURRENT-VOLTAGE CHARACTERISTIC RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (01): : 227 - 227
- [26] THEORY OF S-TYPE CURRENT-VOLTAGE CHARACTERISTICS OF MULTILAYER ISOTYPIC N+-N HETEROSTRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 819 - 821
- [27] N-P-I-STRUCTURE CURRENT-VOLTAGE CHARACTERISTICS RADIOTEKHNIKA I ELEKTRONIKA, 1976, 21 (02): : 303 - 311
- [29] THEORY OF SWITCHING OFF A P-N-P-N STRUCTURE BY A REVERSE ANODIC VOLTAGE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 874 - &