ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES

被引：0

作者：

BASTARD, G ^{[1
]}

BRUM, JA ^{[1
]}

FERREIRA, R ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS, DEPT FIS, BR-13081 SAO PAULO, BRAZIL

来源：

SOLID STATE PHYSICS | 1991年 / 44卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：229 / 415

页数：187

共 50 条

[31] Ferromagnetic metal/semiconductor heterostructures for magneto-electronic devices
Xu, YB
Kernohan, ETM
Freeland, DJ
Tselepi, M
Bland, JAC
Holmes, S
Ritchie, DA
SENSORS AND ACTUATORS A-PHYSICAL, 2000, 81 (1-3) : 258 - 262
[32] ELECTRONIC-STRUCTURE OF SEMI-MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES
CHITTA, VA
MARQUES, GE
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 564 - 571
[33] Computer simulation study on the atomistic and electronic structures of semiconductor heterostructures
MasudaJindo, K
SUPERLATTICES AND MICROSTRUCTURES, 1996, 20 (01) : 117 - 123
[34] ELECTRONIC-PROPERTIES OF FLAT-BAND SEMICONDUCTOR HETEROSTRUCTURES
WHITE, SR
SHAM, LJ
PHYSICAL REVIEW LETTERS, 1981, 47 (12) : 879 - 882
[35] INELASTIC LIGHT-SCATTERING BY ELECTRONIC EXCITATIONS IN SEMICONDUCTOR HETEROSTRUCTURES
ABSTREITER, G
MERLIN, R
PINCZUK, A
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1771 - 1784
[36] Long-lived spin coherence states in semiconductor heterostructures
Pershin, YV
PHYSICAL REVIEW B, 2005, 71 (15)
[37] Quasilocalization of above barrier states in diluted magnetic semiconductor heterostructures
Luo, H.
Dobrowolska, M.
Furdyna, J.K.
Materials Science Forum, 1995, 182-184 : 607 - 612
[38] A variational approach for the calculation of single electron states in semiconductor heterostructures
Mora-Ramos, ME
Toledo-Solano, M
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 232 (01): : 142 - 147
[39] Numerical computation of electronic properties of semiconductor heterostructures for quantum device applications
Lazzouni, M.E., 1600, MCB Univ Press Ltd, Bradford, United Kingdom (14): : 2 - 3
[40] SEMICONDUCTOR HETEROSTRUCTURES
ABSTREITER, G
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1986, 15 (06): : 312 - 318

← 1 2 3 4 5 →