MONTE-CARLO CALCULATION OF DRIFT VELOCITY OF ELECTRONS AND HOLES IN HIGH ELECTRIC-FIELDS IN SILICON MOSFETS

被引：4

|

作者：

BASU, PK

机构：

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90483-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

下载

收藏

页码：156 / 159

页数：4

相关论文

共 50 条

[21] MONTE-CARLO STUDY OF HIGH-ENERGY ELECTRONS IN SILICON DIOXIDE
POROD, W
FERRY, DK
PHYSICAL REVIEW LETTERS, 1985, 54 (11) : 1189 - 1191
[22] DRIFT MOBILITY OF EXCESS ELECTRONS IN LIQUID ETHANE, SUBJECTED TO HIGH ELECTRIC-FIELDS
PETRUCCI, S
JOURNAL OF MOLECULAR LIQUIDS, 1994, 59 (2-3) : 137 - 148
[23] MONTE-CARLO CALCULATION OF PENETRATION OF ELECTRONS INTO POLY(METHYLMETHACRYLATE)
KRAL, V
PAVLICEK, M
CZECHOSLOVAK JOURNAL OF PHYSICS, 1991, 41 (02) : 177 - 183
[24] DRIFT VELOCITY OF ELECTRONS IN SILICON AT HIGH ELECTRIC FIELDS FROM 4.2 DEGREES TO 300 DEGREES K
RODRIGUEZ, V
NICOLET, MA
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 496 - +
[25] ELECTRON-DRIFT VELOCITY IN LEAD-TELLURIDE AT HIGH ELECTRIC-FIELDS
CHATTOPADHYAY, D
PURKAIT, NN
JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6439 - 6442
[26] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS
HOUSTON, PA
EVANS, AGR
SOLID-STATE ELECTRONICS, 1977, 20 (03) : 197 - 204
[27] ELECTRONS AND HOLES DRIFT VELOCITY IN SILICON AT VERY LOW TEMPERATURE
CECCHI, R
LORIA, A
MARTINI, M
OTTAVIANI, G
SOLID STATE COMMUNICATIONS, 1968, 6 (10) : 727 - +
[28] DRIFT VELOCITY OF ELECTRONS AND HOLES AND ASSOCIATED ANISOTROPIC EFFECTS IN SILICON
CANALI, C
OTTAVIANI, G
ALBERIGI.A
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) : 1707 - +
[29] DIFFUSION OF ELECTRONS IN SEMICONDUCTORS IN HIGH ELECTRIC-FIELDS
CHEUNG, PS
HEARN, CJ
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (13): : 1563 - &
[30] DIFFUSION-COEFFICIENT OF HOLES IN SILICON BY MONTE-CARLO SIMULATION
REGGIANI, L
BRUNETTI, R
NORMANTAS, E
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1212 - 1215

← 1 2 3 4 5 →