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- [2] HIGH-FIELD DRIFT VELOCITY OF SILICON INVERSION LAYERS - MONTE-CARLO CALCULATION[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 350 - 353BASU, PK
- [3] MONTE-CARLO CALCULATION OF THE TRANSPORT PARAMETERS OF HOLES IN INDIUM-ANTIMONIDE SUBJECTED TO STRONG ELECTRIC-FIELDS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1052 - 1053OSADCHII, VMLUCHININ, SD
- [4] CALCULATION OF DRIFT VELOCITY IN SILICON AT HIGH ELECTRIC FIELDS[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (06) : 573 - +MCCOMBS, AEMILNES, AG
- [5] MONTE-CARLO SIMULATION OF THE MOTION OF ELECTRONS IN SF6 IN UNIFORM ELECTRIC-FIELDS[J]. ACTA PHYSICA SLOVACA, 1985, 35 (03) : 167 - 173DRIMAL, JTRUNEC, D
- [6] MONTE-CARLO SIMULATION OF THE MOTION OF ELECTRONS IN SF6 IN UNIFORM ELECTRIC-FIELDS[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6311 - 6316DINCER, MSRAJU, GRG
- [7] SATURATION OF DRIFT VELOCITY OF ELECTRONS IN SILICON-CARBIDE SUBJECTED TO STRONG ELECTRIC-FIELDS[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 232 - 234LEVINSHTEIN, MERADOVANOVA, EI
- [8] MONTE-CARLO CALCULATION OF ELECTRON DRIFT VELOCITY IN GAAS WITH A SUPERLATTICE[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3721 - 3725ANDERSEN, DLAAS, EJ
- [9] MONTE-CARLO SIMULATIONS OF HIGH-ENERGY ELECTRONS AND HOLES IN SI-N-MOSFETS[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1991, 10 (10) : 1276 - 1286VENTURI, FSANGIORGI, EBRUNETTI, RQUADE, WJACOBONI, CRICCO, B
- [10] ELECTRON-TEMPERATURE CONCEPT AT VERY HIGH ELECTRIC-FIELDS - A MONTE-CARLO STUDY[J]. PHYSICAL REVIEW B, 1992, 46 (15): : 9428 - 9433BOOTS, HMJ