ENDOR OF SHALLOW DONORS IN SILICON UNDER UNIAXIAL STRESS

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作者：
HALE, EB
CASTNER, TG
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1969年 / 14卷 / 01期
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O4 [物理学];
学科分类号：
0702 ;
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页码：48 / &
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