MOLECULAR-BEAM EPITAXY - TECHNIQUE FOR GROWTH OF GAAS-ALXGA2-XAS HETEROSTRUCTURE LASERS

被引：2

作者：

CHO, AY ^{[1
]}

CASEY, HC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1974年 / QE10卷 / 09期

关键词：

D O I：

10.1109/JQE.1974.1068447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：791 / 791

页数：1

共 50 条

[1] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
[2] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 11 - 14
[3] INTERFACE STATES AND CURRENT THRESHOLD OF GAAS/ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
HONG, CS
WANG, WI
EASTMAN, LF
WOOD, CEC
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 297 - 302
[4] CURRENT INJECTION GAAS-ALXGA1-XAS MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
TSANG, WT
WEISBUCH, C
MILLER, RC
DINGLE, R
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 673 - 675
[5] CLUSTERING AND PHONON EFFECTS IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
HOLONYAK, N
LAIDIG, WD
CAMRAS, MD
MORKOC, H
DRUMMOND, TJ
HESS, K
[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (01) : 71 - 74
[6] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
HOLONYAK, N
DRUMMOND, TJ
CAMRAS, MD
FISCHER, R
[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
[7] IONIZED BEAM DOPING IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
MATSUNAGA, N
SUZUKI, T
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 5710 - 5713
[8] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
[9] BE DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS
ILEGEMS, M
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 445 - 445
[10] MOLECULAR-BEAM EPITAXY OF MULTILAYER STRUCTURES WITH GAAS AND ALXGA1-XAS
JOYCE, BA
FOXON, CT
[J]. PHILIPS TECHNICAL REVIEW, 1987, 43 (5-6): : 143 - 153

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