INTERFACE STATES AND CURRENT THRESHOLD OF GAAS/ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：0

作者：

HONG, CS

WANG, WI

EASTMAN, LF

WOOD, CEC

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICR STRUCT,ITHACA,NY 14853

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 65期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：297 / 302

页数：6

共 50 条

[1] VERY LOW CURRENT THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 11 - 14
[2] VERY LOW CURRENT-THRESHOLD GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1835 - 1835
[3] GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (05) : 288 - 290
[4] LOW-CURRENT-THRESHOLD AND HIGH-LASING UNIFORMITY GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (07) : 473 - 475
[5] EFFECT OF SUBSTRATE-TEMPERATURE ON THE CURRENT THRESHOLD OF GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
REINHART, FK
DITZENBERGER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 118 - 120
[6] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
[7] ALXGA1-XAS/GAAS QUANTUM WELL HETEROJUNCTION LASERS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
HOLONYAK, N
DRUMMOND, TJ
CAMRAS, MD
FISCHER, R
[J]. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 13 - 16
[8] GAAS-A1XGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 741 - 741
[9] CW ELECTRO-OPTICAL CHARACTERISTICS AND PRELIMINARY RELIABILITY OF DOUBLE-HETEROSTRUCTURE GAAS-ALXGA1-XAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
HARTMAN, RL
ELDER, HE
HOLBROOK, WR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 141 - 144
[10] PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
WICKS, G
WANG, WI
WOOD, CEC
EASTMAN, LF
RATHBUN, L
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5792 - 5796

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