TUNNEL-TYPE CURRENT IN SURFACE-BARRIER STRUCTURES MADE OF LIGHTLY DOPED GALLIUM-ARSENIDE

被引：0
|
作者：
DZHAMANBALIN, KK
DMITRIEV, AG
POSSE, EA
SHULGA, MI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 12期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation was made of the forward branch of the current-voltage characteristic (at temperatures in the range 77-410 K) of surface-barrier structures made of lightly doped epitaxial gallium arsenide films with an electron density 3 x 10(15) cm-3, grown on low-resistivity substrates. A thermionic emission current was observed, as expected, at high temperatures (300-410 K), whereas at low temperatures (77-270 K) an unexpected tunnel-type current appeared and this was clearly due to defects that formed in the epitaxial films during growth on a heavily doped substrate.
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页码：1298 / 1300
页数：3
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