A Novel Low Power Three-Input OR/XNOR Gate Design

被引:1
|
作者
Liang, Hao [1 ]
Xia, Yinshui [1 ]
Wang, Shiheng [1 ]
Qian, Libo [1 ]
机构
[1] Ningbo Univ, Sch Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
基金
国家教育部博士点专项基金资助;
关键词
OR/XNOR Gate; Reed-Muller Logic; Low Power; PDP; Transistor Level; HSPICE;
D O I
10.1166/jolpe.2014.1337
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Three-input OR/XNOR gate is the basic complex gate for Reed-Muller (RM) logic to implement logic circuits. To overcome the drawbacks of the present OR and XNOR cascaded OR/XNOR gate with the long delay time, high power consumption and power delay product (PDP), a low power three-input OR/XNOR gate at the transistor level is proposed. The proposed design is simulated using Cadence IC5141 and Synopsys HSPICE with 55 nm CMOS process at 1.2 V standard supply voltage. The post-simulation results demonstrate that the proposed circuit has the advantages of low power, fast speed, and low PDP compared with the classical cascaded designs, and the improvement of the power and PDP are up to 21.88% and 38.61%, respectively.
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页码:342 / 346
页数:5
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