共 15 条
- [3] BULK SEMICONDUCTOR HIGH-SPEED CURRENT WAVEFORM GENERATOR [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (05): : 720 - &
- [4] STUDY OF CHARACTERISTICS FOR DIELECTRIC GALLIUM-ARSENIDE INTERFACE BY METHOD OF SURFACE PHOTOLUMINESCENCE [J]. DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1975, (01): : 69 - 72
- [5] EFFECT OF CONDITIONS OF DIELECTRIC LAYERS DEPOSITION ON THE GALLIUM-ARSENIDE SURFACE-COMPOSITION [J]. DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1983, (11): : 52 - 54
- [6] SURFACE-BARRIER INSTABILITY OF THE CURRENT IN GALLIUM-ARSENIDE SCHOTTKY-BARRIER STRUCTURES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (02): : 223 - 224
- [7] BULK AND NEAR-SURFACE ANNEALING BEHAVIOR OF THE 0.8 EV LUMINESCENCE IN SEMI-INSULATING GALLIUM-ARSENIDE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 50 (03): : 249 - 253
- [8] TUNNEL-TYPE CURRENT IN SURFACE-BARRIER STRUCTURES MADE OF LIGHTLY DOPED GALLIUM-ARSENIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1298 - 1300
- [9] Influence of field effect on the characteristics of surface acoustic waves in a metal-dielectric-semiconductor structure based on gallium arsenide [J]. RUSSIAN ULTRASONICS, 1998, 28 (02): : 44 - 49
- [10] All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2016, 87 (08):