EFFECT OF CONDITIONS OF DIELECTRIC LAYERS DEPOSITION ON THE GALLIUM-ARSENIDE SURFACE-COMPOSITION

被引：0
|
作者：
ALOSHIN, VG
NEMOSHKALENKO, VV
SEMASHKO, OM
SENKEVICH, AI
机构：
来源：
DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI | 1983年 / 11期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：52 / 54
页数：3
相关论文
共 50 条
  • [1] GALLIUM-ARSENIDE SURFACE-COMPOSITION
    ALESHIN, VG
    GASSANOV, LG
    SEMASHKO, EM
    NEMOSHKALENKO, VV
    SENKEVICH, AI
    PROKOPENKO, VM
    VARCHENKO, NN
    [J]. DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1982, (07): : 54 - 57
  • [2] EFFECT OF CHEMICAL TREATMENT ON THE COMPOSITION AND STRUCTURE OF SURFACE-LAYERS IN SEMIINSULATING GALLIUM-ARSENIDE
    EVGENEV, SB
    LAPKINA, IA
    BOCHAROVA, NG
    KHOLOPOVA, LV
    BULBA, NO
    [J]. INORGANIC MATERIALS, 1991, 27 (08) : 1318 - 1322
  • [3] GALLIUM-ARSENIDE DEPOSITION IMPROVED
    STINSON, S
    [J]. CHEMICAL & ENGINEERING NEWS, 1986, 64 (08) : 33 - 33
  • [4] COMPOSITION OF METALLIC-FILMS ON GALLIUM-ARSENIDE SURFACE
    ALESHIN, VG
    NEMOSHKALENKO, VV
    SEMASHKO, EM
    SENKEVICH, AI
    [J]. DOKLADY AKADEMII NAUK SSSR, 1983, 273 (06): : 1345 - 1348
  • [5] PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS
    PARENTEAU, M
    WU, FM
    JORIO, A
    CARLONE, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (10) : 5185 - 5190
  • [6] SURFACE PHOTO-VOLTAIC EFFECT IN GALLIUM-ARSENIDE
    ALPEROVICH, VL
    BELINICHER, VI
    NOVIKOV, VN
    TEREKHOV, AS
    [J]. JETP LETTERS, 1980, 31 (10) : 546 - 549
  • [7] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
    ARORA, VK
    MUI, DSL
    MORKOC, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238
  • [8] STRUCTURAL INHOMOGENEITIES IN GALLIUM-ARSENIDE EPITAXIAL LAYERS
    ASTAKHOV, VM
    ZALETIN, VM
    SIDOROV, YG
    STENIN, SI
    [J]. THIN SOLID FILMS, 1976, 32 (02) : 343 - 345
  • [9] RADIOELECTRIC EFFECT IN GALLIUM-ARSENIDE
    KEMARSKII, VA
    LYUBCHENKO, VE
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (12): : 1492 - 1494
  • [10] STUDY OF CHARACTERISTICS FOR DIELECTRIC GALLIUM-ARSENIDE INTERFACE BY METHOD OF SURFACE PHOTOLUMINESCENCE
    ZUEV, VO
    KORBUTYAK, DV
    LITOVCHENKO, VG
    VEITS, VV
    [J]. DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1975, (01): : 69 - 72
12345