EPITAXIAL-GROWTH OF MNTE ON CDTE(110)

被引：8
|
作者：
NILES, DW [1 ]
HOCHST, H [1 ]
ENGELHARDT, MA [1 ]
机构：
[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 52卷
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0368-2048(90)85013-Y
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Thin films of MnTe were grown by molecular beam epitaxy on CdTe(l 10). Angle resolved synchrotron radiation photoemission spectroscopy shows that MnTe grows initially in the metastable zinc blende structure In registry with the substrate. After a film thickness of 4̃0 Å the overlayer relaxes Into the thermodynamically stable hexagonal NiAs structure. Above 1̃00 C the MnTe/CdTe heterostructure is thermally unstable. At -250 C the MnTe film reacts with the substrate and forms an epitaxial overlayer of MnCdTe2. Comparison of the valence band photoemission spectra with calculated density of states suggests the formation of a ferromagnetic ordered MnCdTe2 compound rather then the thermodynamlcally more favorable phase separation into antiferromagnetic MnTe2 and zinc-blende CdTe. © 1990.
引用
收藏
页码：139 / 147
页数：9
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