ELECTRICAL CHARACTERIZATION OF A HETEROJUNCTION FIELD-EFFECT TRANSISTOR PHOTODETECTOR (HFETPD)

被引：0
|
作者：
THOMPSON, D
MCCOWEN, A
MAWBY, P
机构：
[1] Department of Electrical and Electronic Engineering, University College of Swansea, Swansea, SA2 8PP Wales, Singleton Park
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期
关键词：
D O I：
10.1016/0038-1101(93)90168-P
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytic model is developed to determine the gate-substrate potential profile in a heterojunction field-effect transistor photodetector HFETPD. The potential profiles and the associated depletion widths determined by the model are shown to be in excellent agreement with a device simulator which numerically solves the drift-diffusion equations. The behaviour of the active layer depletion width is also studied as a function of gate bias and doping levels in the delta plane, the active layer and barrier layer.
引用
收藏
页码：1295 / 1302
页数：8
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