Atomic-Scale Analysis of Self-Positioning Nanostructures

被引：1

作者：

Nishidate, Y. ^{[1
]}

Nikishkov, G. P. ^{[1
]}

机构：

[1] Univ Aizu, Aizu Wakamatsu, Fukushima 9658580, Japan

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2008年 / 6卷

关键词：

Nano-wires; quantum wires; and nanotubes; Gallium arsenide; Indium arsenide; Semiconductor-semiconductor heterostructures; Computer simulations;

D O I：

10.1380/ejssnt.2008.301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We performed an atomic-scale analysis of self-positioning nanostructures using the atomic-scale finite element method (AFEM) and Kriging interpolation technique. Equilibrium atomic configurations are determined for varying structure thicknesses and results are compared with the continuum mechanics solution under plane strain conditions. We observed significant decrease of the equilibrium curvature radius when the structure thickness is less than 40 nm. It is found that large compressive strains near the free surface affect the distribution of strains as the structure size decreases.

引用

页码：301 / 306

页数：6

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