ATOMIC-SCALE ANALYSIS OF QUANTUM NANOSTRUCTURES WITH THE STM

被引：4

作者：

JOHNSON, MB ^{[1
]}

PFISTER, M ^{[1
]}

ALVARADO, SF ^{[1
]}

SALEMINK, HWM ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00049-Z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Important features of semiconductor quantum structures can be observed by cross-sectional scanning tunneling microscopy down to the atomic scale. The MBE-grown III-V multilayers are cleaved in UHV to expose an atomically flat cross-sectional plane, which is then imaged with the STM. Chemically selective imaging enables us to distinguish between atoms within the group III and analyze the AlGaAs composition in atomic detail: we find Al clustering on the scale of a few nanometers in many MBE-grown materials. The heterojunction interfaces and their roughness can be analyzed down to the unit-cell lattice period. The electronic signature of active dopants such as Be is observed and quantified. Recent work shows that all these possibilities can be used to study the MBE growth of AlAs/GaAs superlattices on V-grooved substrates with unprecedented detail.

引用

页码：31 / 34

页数：4

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