POLYSILICON AS A MATERIAL FOR MICROSENSOR APPLICATIONS

被引：109
|
作者：
OBERMEIER, E
KOPYSTYNSKI, P
机构：
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 30卷 / 1-2期
关键词：
D O I：
10.1016/0924-4247(92)80210-T
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Important characteristics of boron-doped LPCVD polysilicon layers with regard to sensor applications are presented. Properties such as the resistivity, temperature coefficient of the resistance, gauge factor and long-term stability are described. A pressure sensor utilizing polysilicon piezoresistors with a measurement range of 1 bar and a sensitivity of roughly 11 mV/V FS, a laser-trimmed polysilicon temperature sensor with a sensitivity of -3.4 x 10(-3) K-1 and non-linearity of less than 0.5% and a pressure sensor with polysilicon-based on-chip calibration and temperature compensation are described.
引用
收藏
页码：149 / 155
页数：7
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