共 50 条
- [41] LIGHT-INDUCED DIFFRACTION AT 2-PHOTON ABSORPTION IN SEMICONDUCTORS FIZIKA TVERDOGO TELA, 1976, 18 (04): : 998 - 1003
- [42] ENERGY-GAP DEPENDENCE OF 2-PHOTON ABSORPTION IN SEMICONDUCTORS JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1984, 1 (12): : 1299 - 1299
- [45] An impact ionization model including non-Maxwellian and non-parabolicity effects SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 46 - 49
- [46] MAGNETO-OPTIC TRANSITIONS AND NON-PARABOLICITY PARAMETERS IN THE CONDUCTION-BAND OF SEMICONDUCTORS JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (17): : 3365 - 3377
- [47] INFLUENCE OF DIELECTRIC SCREENING AND BAND NON-PARABOLICITY ON IONIZED IMPURITY SCATTERING IN DOPED SEMICONDUCTORS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02): : 577 - 583
- [49] CALCULATION OF OSCILLATOR STRENGTH OF A 2-PHOTON ABSORPTION TRANSITION TO AN EXCITON STATE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1224 - +
- [50] EXCITON DYNAMICS FOLLOWING 2-PHOTON ABSORPTION IN GDCL3 JOURNAL DE PHYSIQUE, 1985, 46 (C-7): : 119 - 123