SURFACE-STRUCTURE OF BETA-FESI(2)(101) EPITAXIALLY GROWN ON SI(111)

被引：14

作者：

DEPARGA, ALV

DELAFIGUERA, J

PRIETO, JE

OCAL, C

MIRANDA, R

机构：

[1] Departamento de Física de la Materia Condensada, C-III, Universidad Autónoma de Madrid, Cantoblanco, Madrid

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 06期

关键词：

D O I：

10.1007/BF00331745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface morphology and structure of beta-FeSi2(101) films epitaxially grown on Si(111) has been studied by means of Scanning Tunneling Microscopy (STM). The films are formed by large crystallites which are single domain. Each crystallite has only one of the three possible azimuthal orientations with respect to the substrate. A large density of planar defects, however, is detected on top of each crystallite. They are assigned to intrinsic stacking faults and their existence seems hard to avoid. This high density of intrinsic defects casts serious doubts on the use of beta-FeSi2 as an optoelectronic material.

引用

页码：477 / 482

页数：6

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