PHOTOLUMINESCENCE INVESTIGATION OF AN IN0.15GA0.85AS/GAAS COUPLED DOUBLE QUANTUM WELL

被引：4
|
作者：
WANG, XH [1 ]
REINO, LH [1 ]
机构：
[1] UNIV TURKU, WIHURI PHYS LAB, SF-20500 TURKU 50, FINLAND
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 5卷 / 01期
关键词：
Semiconducting Indium Compounds;
D O I：
10.1016/0749-6036(89)90071-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：79 / 81
页数：3
相关论文
共 50 条
  • [1] PHOTOLUMINESCENCE INVESTIGATIONS OF IN0.15GA0.85AS/GAAS AND IN0.15GA0.85AS/ALGAAS QUANTUM WELL STRUCTURES
    LAIHO, R
    [J]. ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 165 - 172
  • [2] Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence
    Goldys, EM
    Zuo, HY
    Tansley, TL
    Phillips, MR
    Contessa, CM
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (06) : 1223 - 1226
  • [3] Investigation of thermal interdiffusion in InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well heterostructures
    Agarwal, A.
    Srujan, M.
    Chakrabarti, S.
    Krishna, S.
    [J]. JOURNAL OF LUMINESCENCE, 2013, 143 : 96 - 100
  • [4] Tunneling behaviors of photogenerated electrons in In0.15Ga0.85As/GaAs quantum well photoelectrodes
    Liu, Y
    Xiao, XR
    Zeng, YP
    Pan, D
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (47): : 10421 - 10424
  • [5] Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells
    Goldys, EM
    Zuo, HY
    Phillips, MR
    Contessa, CM
    Vaughan, MR
    Tansley, TL
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (08) : 922 - 927
  • [6] PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS/GAAS QUANTUM-WELLS
    CESCHIN, AM
    QUIVY, AA
    SOARES, JANT
    ENDERLEIN, R
    TABATA, A
    SCOLFARO, LMR
    DASILVA, ECF
    LEITE, JR
    OLIVEIRA, JBB
    MENESES, EA
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1994, 15 (03) : 333 - 337
  • [7] Determination of the subband carrier densities in a strained GaAs/In0.15Ga0.85As/Al0.22Ga0.78As single quantum well using photoluminescence
    Kim, TW
    Jung, M
    Lee, DU
    [J]. APPLIED SURFACE SCIENCE, 1996, 93 (02) : 131 - 134
  • [8] A novel Al0.33Ga0.67As/In0.15Ga0.85As/GaAs quantum well Hall device grown on (111) GaAs
    Sghaier, H.
    Bouzaiene, L.
    Sfaxi, L.
    Maaref, H.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2012, 15 (01) : 72 - 76
  • [9] Strain-driven alloy decomposition of In0.15Ga0.85As well layers in lnAs/In0.15Ga0.85As dots-in-a-well structure
    Wang Chong
    Liu Zhao-Lin
    Chen Ping-Ping
    Cui Hao-Yang
    Xia Chang-Sheng
    Yang Yu
    Lu Wei
    [J]. ACTA PHYSICA SINICA, 2007, 56 (09) : 5418 - 5423
  • [10] Formation and characterization of (553)B In0.15Ga0.85As/GaAs quantum wire structure
    [J]. 1600, American Institute of Physics Inc. (90):
12345