PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDIES ON DELTA-DOPED IN0.15GA0.85AS/GAAS QUANTUM-WELLS

被引：8

作者：

CESCHIN, AM ^{[1
]}

QUIVY, AA ^{[1
]}

SOARES, JANT ^{[1
]}

ENDERLEIN, R ^{[1
]}

TABATA, A ^{[1
]}

SCOLFARO, LMR ^{[1
]}

DASILVA, ECF ^{[1
]}

LEITE, JR ^{[1
]}

OLIVEIRA, JBB ^{[1
]}

MENESES, EA ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS GLEB WATAGHIN,BR-13081 CAMPINAS,BRAZIL

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1994年 / 15卷 / 03期

关键词：

D O I：

10.1006/spmi.1994.1065

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Experimental and theoretical studies on delta-doped In0.15Ga0.85As/GaAs quantum wells are reported. Photoreflectance (PR) and Photoluminescence (PL) spectra are measured and compared with results of band structure and PL line shape calculations. The dominating structure seen in the PL spectra is related to the delta-doping well. Its line shape is well described by k(parallel to)-non-conserving radiative transitions.

引用

页码：333 / 337

页数：5

共 50 条

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