THE POSSIBILITIES AND LIMITATIONS OF ION-BEAM ETCHING OF YBA2CU3O7-X THIN-FILMS AND MICROBRIDGES

Patterning of high-T-c thin films and multilayer systems is a key technology for device application. We use Ar+ ion-beam etching for thin-film patterning and carried out an optimization of the main etching parameters like ion energy and substrate temperature for damage-free etching in the case of patterning microbridges. To investigate the behavior of surface-etched films we compared electrical measurements obtained on step by step thinned YBa2Cu3O7-x (YBCO) films to those deposited with different thicknesses and carried out X-ray diffraction measurements at the etched surfaces. The damaging effect on surface by ion-beam etching was investigated in terms of measuring the critical temperature and critical current density of thinned microbridges. We show examples how to use this technology in device modification.