ION-BEAM MODIFICATION OF YBA2CU3O7-X SUPERCONDUCTING THIN-FILMS

The effect of Ar ion implantation on the superconducting properties of YBa2Cu3O7-x thin films has been studied by using resistance measurements and x-ray diffraction. The experimental results show that YBa2Cu3O7-x films with high quality had some resistance to ion irradiation. As the Ar ion dose increases, the transition temperature T(c) decreases slowly, but the critical current density J(c) deceases very fast. We discuss the influence of Ar ion implantation upon one-dimensional Cu-O chains and two-dimensional Cu-O planes. We also explored the possibility of using ion implantation technique to pattern YBa2Cu3O7-x superconducting thin films and to make superconducting electronic devices.