IMPROVED PERFORMANCE OF A FIELD-EFFECT TRANSISTOR

被引：3

作者：

MUZUMDAR, P

MIRCHANDANI, K

TRUSELL, F

DROZNIN, V

MILSHTEIN, S

机构：

[1] EE Department, University of Lowell, Lowell

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1016/0749-6036(90)90330-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In GaAs or Si FETs, the mobility of charge carriers in the channel is influenced by the electric field. The real velocity profiles of the carriers in the channel limits the transfer time. In order to improve the velocity of carriers we suggest: i) Create a doping gradient in the channel. ii) Use a series of independent gates each having a different DC bias. The Si multigate and GaAs dual-gate were fabricated. Measurements revealed that transconductance increased from 19.5 mS/mm to 30.5 mS/mm for the Si Device, and increased from 480 mS/mm to 640 mS/mm for the GaAs Device. © 1990.

引用

页码：357 / 359

页数：3

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