THEORY OF BROADENING AND SHIFT OF CYCLOTRON-RESONANCE IN SEMICONDUCTORS

被引：0

作者：

EVRARD, R ^{[1
]}

VIGNERON, JP ^{[1
]}

机构：

[1] UNIV LIEGE,B-4000 LIEGE,BELGIUM

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1978年 / 23卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：225 / 225

页数：1

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[21] CYCLOTRON-RESONANCE IN SEMICONDUCTORS WITH ZINC BLENDE STRUCTURE
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[J]. ACTA PHYSICA AUSTRIACA, 1977, 47 (04): : 265 - 277
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[23] THEORY OF CYCLOTRON-RESONANCE LINESHAPE REVISITED
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[24] THEORY OF CYCLOTRON-RESONANCE IN LAYER CRYSTALS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1228 - 1230
[25] CYCLOTRON-RESONANCE LINEWIDTH IN SEMICONDUCTORS FOR ACOUSTIC PHONON SCATTERING
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[26] QUANTUM-LIMIT CYCLOTRON-RESONANCE LINEWIDTH IN SEMICONDUCTORS
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[27] ON THE CYCLOTRON-RESONANCE LINEWIDTH IN SEMICONDUCTORS AT LOW-TEMPERATURES
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 102 (02): : K81 - K83
[28] HYSTERETIC 3-PHOTON CYCLOTRON-RESONANCE IN SEMICONDUCTORS
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[29] MAGNETIC-FIELD DEPENDENCE OF CYCLOTRON-RESONANCE LINE BROADENING
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[30] EVIDENCE OF A PHASE-SHIFT IN ACOUSTIC CYCLOTRON-RESONANCE
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[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 2749 - &

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