BI-INDUCED ELECTRONIC STATES AT THE INTERFACE WITH N-TYPE AND P-TYPE GAAS(110)

被引：5

作者：

COMPANO, R ^{[1
]}

DELPENNINO, U ^{[1
]}

MARIANI, C ^{[1
]}

BETTI, MG ^{[1
]}

PEDIO, M ^{[1
]}

机构：

[1] CNR, IST STRUTTURA MAT, I-00044 FRASCATI, ITALY

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90241-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic transitions of ordered Bi monolayers grown at room temperature on n- and p-type doped GaAs(110) were studied by high-resolution electron energy loss spectroscopy. The absorption edge of the semiconducting Bi monolayer was measured and a band gap of 0.65 eV is estimated. A new absorption feature is shown, particularly evident on p-doped GaAs, and its origin can be related to states generated by the dangling and broken bond acceptor-like states located at the regular dislocation arrays in the Bi overlayer.

引用

页码：242 / 246

页数：5

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