Bi-induced p-type conductivity in nominally undoped Ga(AsBi)

被引：41
|
作者：
Pettinari, G. [1 ]
Patane, A. [1 ]
Polimeni, A. [2 ]
Capizzi, M. [2 ]
Lu, Xianfeng [3 ]
Tiedje, T.
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Roma La Sapienza, CNISM Dipartimento Fis, I-00185 Rome, Italy
[3] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期
关键词：
electrical conductivity; gallium compounds; III-V semiconductors; impurity states; semiconductor epitaxial layers; valence bands; GAAS1-XBIX;
D O I：
10.1063/1.3690901
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report p-type conductivity in nominally undoped GaAs1-xBix epilayers for a wide range of Bi-concentrations (0.6% <= x <= 10.6%). The counterintuitive increase of the conductivity with increasing x is paralleled by an increase in the density of free holes by more than three orders of magnitude in the investigated Bi-concentration range. The p-type conductivity results from holes thermally excited from Bi-induced acceptor levels lying at 26.8 meV above the valence band edge of GaAs1-xBix with concentration up to 2.4 x 10(17) cm(-3) at x = 10.6%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690901]
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页数：4
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