THE INFLUENCE OF OHMIC METAL COMPOSITION ON THE CHARACTERISTICS OF OHMIC CONTACTS

被引：1
|
作者：
KOVACS, B
MOJZES, I
VERESEGYHAZY, R
NEMETHSALLAY, M
BIRO, S
PECZ, B
机构：
[1] Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest, Ujpest 1
来源：
VACUUM | 1990年 / 40卷 / 1-2期
关键词：
7;
D O I：
10.1016/0042-207X(90)90150-W
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The AuGe/Ni/Au metallization is one of the most widely used contact structures in compound semiconductor devices. Many laboratories use a metal structure consisting of a AuGe eutectic (88 : 12) layer with, typically, 5% Ni. The influence of Ni proportion on the electrical parameters of contacts, the surface morphology and the volatile component loss during annealing were investigated. The results show that the effect of Ni proportion on the minimum value of specific contact resistance and on the surface morphology is much more significant than its effect on the optimum heat treatment temperature. © 1990.
引用
收藏
页码：179 / 181
页数：3
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