STUDY OF CRYSTALLIZATION IN AMORPHOUS TELLURIUM-FILMS USING RESISTIVITY MEASUREMENTS

被引：8
|
作者：
OKUYAMA, K
KUMAGAI, Y
机构：
[1] Yamagata Univ, Yonezawa, Jpn, Yamagata Univ, Yonezawa, Jpn
来源：
THIN SOLID FILMS | 1988年 / 156卷 / 02期
关键词：
CRYSTALLIZATION - ELECTRIC CONDUCTIVITY - GOLD AND ALLOYS - SUBSTRATES;
D O I：
10.1016/0040-6090(88)90329-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A rapid and drastic decrease in resistivity as a result of the crystallization of amorphous tellurium films deposited onto a glass substrate at 10-40 degree C was measured. On combining the above results with a model proposed for the change in resistivity of the crystallizing film, the activation energy for crystallization was evaluated to be 0. 86 ev for pure tellurium films. A higher value of the activation energy was obtained for gold-nucleated tellurium films.
引用
收藏
页码：345 / 350
页数：6
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