EFFECT OF NEUTRON-IRRADIATION ON RESPONSIVITY OF P-I-N PHOTODETECTORS

被引：0
|
作者：
GEDAM, SG
BANERJEE, PK
MITRA, SS
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期
关键词：
D O I：
10.1063/1.341295
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4245 / 4247
页数：3
相关论文
共 50 条
  • [41] A theory for the nonlinear response of high power p-i-n photodetectors
    Herbert, DC
    Chidley, E
    Allenson, M
    Wight, D
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (01) : 634 - 640
  • [42] Nitrogen ion implanted ZnSe/GaAs p-i-n photodetectors
    Hong, H
    Anderson, WA
    Haetty, J
    Lee, EH
    Chang, HC
    Na, MH
    Luo, H
    Petrou, A
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) : 2328 - 2333
  • [43] Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applications
    Summonte, C
    Rizzoli, R
    Centurioni, E
    Iencinella, D
    Moretti, L
    De Stefano, L
    Rendina, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 784 - 787
  • [44] Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation
    Albrecht, Bjoern
    Kopta, Susanne
    John, Oliver
    Ruetters, Martin
    Kunzer, Michael
    Driad, Rachid
    Marenco, Norman
    Koehler, Klaus
    Walther, Martin
    Ambacher, Oliver
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (06) : 166 - 172
  • [45] Measurement and modelling of high performance lateral p-i-n photodetectors
    Giziewicz, W
    Choy, HKH
    Fonstad, CG
    Prasad, S
    MICROWAVE AND OPTICAL TECHNOLOGY 2003, 2003, 5445 : 114 - 119
  • [46] InGaN p-i-n ultraviolet - A band-pass photodetectors
    Ko, T. K.
    Shei, S. C.
    Chang, S. J.
    Chiou, Y. Z.
    Lin, R. M.
    Chen, W. S.
    Shen, C. F.
    Chang, C. S.
    Lin, K. W.
    IEE PROCEEDINGS-OPTOELECTRONICS, 2006, 153 (04): : 212 - 214
  • [47] Fabrication of the drift-enhanced InGaAs p-i-n photodetectors
    Li, G. Y.
    Niu, B.
    Gu, X. W.
    Wang, Y.
    Kong, Y. C.
    FIFTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATION, 2019, 11023
  • [48] Ge on Si p-i-n Photodetectors with 40 GHz bandwidth
    Klinger, S.
    Vogel, W.
    Berroth, M.
    Kaschel, M.
    Oehme, M.
    Kasper, E.
    2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2008, : 188 - 190
  • [49] Effect of a Patterned Sapphire Substrate on InGaN-Based p-i-n Ultraviolet Photodetectors
    Hyun-Jin Lee
    Seung-Hye Baek
    Hyunseok Na
    Sung-Nam Lee
    Journal of the Korean Physical Society, 2019, 75 : 362 - 366
  • [50] SILICON P-I-N PHOTODETECTORS WITH INTEGRATED TRANSISTOR-AMPLIFIERS
    HATA, S
    SUGETA, T
    MIZUSHIMA, Y
    ASATANI, K
    NAWATA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) : 989 - 991
12345