VALENCE-BAND STATES OF H-GAAS(110)

被引：19

作者：

PLESANOVAS, A ^{[1
]}

TARABINI, AC ^{[1
]}

ABBATI, I ^{[1
]}

KACIULIS, S ^{[1
]}

PAOLICELLI, G ^{[1
]}

PASQUALI, L ^{[1
]}

RUOCCO, A ^{[1
]}

NANNARONE, S ^{[1
]}

机构：

[1] UNIV MODENA, DIPARTIMENTO FIS, VIA G CAMPI 213-A, I-41100 MODENA, ITALY

来源：

SURFACE SCIENCE | 1994年 / 307卷

关键词：

D O I：

10.1016/0039-6028(94)91510-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The two-dimensional surface electronic band structure of H:GaAs(110) is studied by angular resolved ultraviolet photoemission spectroscopy along the XBAR'-MBAR and XBAR-MBAR symmetry lines and in the high symmetry points of the surface Brillouin zone. Three surface state bands are resolved in the first 5 eV below the upper valence band edge. A comparison with theoretical band structure calculations yields a satisfactory agreement, giving evidence of hydrogen induced GaAs(110) surface derelaxation. The clean GaAs(110) surface electronic band structure is studied comparing results with available theoretical and experimental data.

引用

页码：890 / 895

页数：6

共 50 条

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