共 50 条
- [1] VALENCE-BAND OFFSET AND INTERFACE CHEMISTRY OF CDS/INP(110) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 807 - 814
- [2] Valence-Band Discontinuity at the AIN/Si Interface Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (10): : 6413 - 6414
- [3] Valence-band discontinuity at the AlN/Si interface JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (10): : 6413 - 6414
- [4] CHEMICAL-REACTIONS AT THE SI GAAS(110) AND SI INP(110) INTERFACES - EFFECTS ON VALENCE-BAND DISCONTINUITY MEASUREMENTS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1543 - 1547
- [6] Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures PHYSICAL REVIEW B, 1996, 54 (04): : 2718 - 2722
- [7] Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures Physical Review B: Condensed Matter, 54 (04):
- [8] THE SI/GAAS (110) HETEROJUNCTION - STRAIN, DISORDER, AND VALENCE-BAND DISCONTINUITY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1279 - 1283
- [10] Valence-band discontinuity at the C60/Si(111)-7×7 interface J Phys Condens Matter, 13 (L111-L118):