THERMOELECTRIC PROPERTIES AND MICROSTRUCTURE OF FE-SI-O THIN-FILMS PREPARED BY ICB METHOD

被引：0

作者：

NAKAGIRI, Y ^{[1
]}

GYOTEN, H ^{[1
]}

NISHIWAKI, F ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD,DEVICE PROC TECHNOL RES LAB,MORIGUCHI,OSAKA 570,JAPAN

来源：

NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1992年 / 100卷 / 07期

关键词：

FE-SI-O; THERMOELECTRIC MATERIALS; AMORPHOUS; IONIZED CLUSTER BEAM; THIN FILMS; MICROSTRUCTURE MESOSCOPIC;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fe-Si-O thin films were prepared by Ionized Cluster Beam method, and the effect of oxygen content and heat treatment on their thermoelectric properties and microstructure were examined. As-deposited films were in amorphous state and they showed semiconducting properties with low Seebeck coefficients depending on the amount of oxygen in the temperature range from R. T. to 400-degrees-C. Above 450-degrees-C, migration of atoms, change of chemical bonds, and growth of microcrystals proceeded remarkably. As a result, the conductivity of the samples with a small amount of oxygen showed some enhancement and that of the samples with a large amount of oxygen showed a remarkable decrease. It is elucidated that the changes of conductivity is dependent on the amount of Si-O amorphous insulator; whether or not the conduction paths between Fe-Si microcrystals were separated by Si-O amorphous insulator caused the different conduction mechanism.

引用

页码：941 / 945

页数：5

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