INSITU INVESTIGATION OF THE GROWTH OF RF GLOW-DISCHARGE DEPOSITED AMORPHOUS-GERMANIUM AND SILICON FILMS

被引:74
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ANTOINE, AM
DREVILLON, B
CABARROCAS, PRI
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10.1063/1.337924
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O59 [应用物理学];
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页码:2501 / 2508
页数:8
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