HETEROGENEITIES AND SURFACE EFFECTS IN GLOW-DISCHARGE DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：24

作者：

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

THIN SOLID FILMS | 1982年 / 90卷 / 02期

关键词：

D O I：

10.1016/0040-6090(82)90631-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：119 / 129

页数：11

共 50 条

[1] RAMAN-STUDY ON THE SILICON NETWORK OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY A GLOW-DISCHARGE
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[2] THE GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
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[3] HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED IN CASCADED GLOW-DISCHARGE REACTORS
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[5] A STUDY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY HOT-WALL GLOW-DISCHARGE
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[6] THE NUCLEATION AND GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
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[7] BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGE
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[8] EFFECT OF DISCHARGE CONDITIONS ON CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY DC GLOW-DISCHARGE DECOMPOSITION
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[9] TRANSPORT-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY DC GLOW-DISCHARGE DECOMPOSITION
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[10] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
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