ION-BEAM SYNTHESIS OF EPITAXIAL COSI2 LAYERS AND THE REDISTRIBUTION OF DOPANTS WITHIN THEM

被引：4
|
作者：
REESON, KJ
SPRAGGS, RS
GWILLIAM, RM
SEALY, BJ
机构：
[1] Dept. Electronic and Electrical Engineering, University of Surrey
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 68卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(92)96108-B
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The move within the semiconductor industry towards ultra-large-scale integration (ULSI) has prompted the evolution of new technologies. Ion beam synthesis (IBS) is one such technology in which high doses of energetic ions are used to form compound layers within a target substrate. This paper studies the evolution of IBS structures produced by high dose cobalt implantation, during both implantation and annealing. It also examines the redistribution of dopants in the as implanted and annealed CoSi2 structures.
引用
收藏
页码：369 / 379
页数：11
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