Preparation of nanoporous n-InP(100) layers by electrochemical etching in HCl solution

被引：0
|
作者：
Suchikova, J. A. [1 ]
Kidalov, V. V. [1 ]
Sukach, G. A. [2 ]
机构：
[1] Berdyansk State Pedag Univ, 4 Shmidt St, UA-71118 Berdyansk, Ukraine
[2] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
FUNCTIONAL MATERIALS | 2010年 / 17卷 / 01期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The manufacture procedure of porous InP with 30-40 nm pore size by electrochemical etching of n-type InP single crystals in HCl solution is presented. The X-ray diffraction studies and chemical composition determination using EDAX made it possible to establish the oxide film absence and a surface stoichiometry violation in the porous InP layers.
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页码：131 / 134
页数：4
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