DETERMINATION OF A NATURAL VALENCE-BAND OFFSET - THE CASE OF HGTE AND CDTE

被引:89
|
作者
SHIH, CK
SPICER, WE
机构
关键词
D O I
10.1103/PhysRevLett.58.2594
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2594 / 2597
页数:4
相关论文
共 50 条
  • [31] MAGNETOOPTICS AND VALENCE-BAND DISCONTINUITY IN A HGTE-HG1-XCDXTE SUPERLATTICE
    VONTRUCHSESS, M
    LATUSSEK, V
    GOSCHENHOFER, F
    BECKER, CR
    LANDWEHR, G
    BATKE, E
    SIZMANN, R
    HELGESEN, P
    PHYSICAL REVIEW B, 1995, 51 (24): : 17618 - 17623
  • [32] Valence band offset in HgTe/Hg1−xCdxTe superlattices
    C. R. Becker
    V. Latussek
    M. Li
    A. Pfeuffer-Jeschke
    G. Landwehr
    Journal of Electronic Materials, 1999, 28 : 826 - 829
  • [33] Valence band offset in HgTe/Hg1-xCdxTe superlattices
    Becker, CR
    Latussek, V
    Li, M
    Pfeuffer-Jeschke, A
    Landwehr, G
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (06) : 826 - 829
  • [34] VALENCE BAND OF HGTE
    IVANOVOMSKII, VI
    KOLOMIETS, BT
    MALKOVA, AA
    MEKHTIEV, AS
    PHYSICA STATUS SOLIDI, 1969, 32 (01): : K83 - +
  • [35] LINEARITY (COMMUTATIVITY AND TRANSITIVITY) OF VALENCE-BAND DISCONTINUITY IN HETEROJUNCTIONS WITH TE-BASED II-VI SEMICONDUCTORS - CDTE, HGTE, AND ZNTE
    DUC, TM
    HSU, C
    FAURIE, JP
    PHYSICAL REVIEW LETTERS, 1987, 58 (11) : 1127 - 1130
  • [36] Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions
    Di, Ventra, M.
    Peressi, M.
    Baldereschi, A.
    Physical Review B: Condensed Matter, 54 (8/PT2):
  • [37] THE EFFECT OF A VALENCE-BAND OFFSET ON POTENTIAL AND CURRENT DISTRIBUTIONS IN HGCDTE HETEROSTRUCTURES
    KRAUT, EA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 420 - 423
  • [38] Chemical and structural contributions to the valence-band offset at GaP/GaAs heterojunctions
    Di Ventra, M
    Peressi, M
    Baldereschi, A
    PHYSICAL REVIEW B, 1996, 54 (08): : 5691 - 5695
  • [39] EXPERIMENTAL-DETERMINATION OF THE VALENCE-BAND STRUCTURE OF MOLECULAR-BEAM-EPITAXY-GROWN CDTE(110)
    HOCHST, H
    NILES, DW
    HERNANDEZCALDERON, I
    PHYSICAL REVIEW B, 1989, 40 (12): : 8370 - 8377
  • [40] DETERMINATION OF THE VALENCE-BAND OFFSET OF GAAS-(GA,IN)P QUANTUM-WELLS BY PHOTOREFLECTANCE SPECTROSCOPY
    ARNAUD, G
    BORING, P
    GIL, B
    GARCIA, JC
    LANDESMAN, JP
    LEROUX, M
    PHYSICAL REVIEW B, 1992, 46 (03): : 1886 - 1888