MOMBE AND PEMOCVD GROWTH OF GAAS ON SI (100) SUBSTRATES

被引：0
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作者：
KAMP, M
LEIBER, J
MUSOLF, J
BRAUERS, A
WEYERS, M
HEINECKE, H
LUTH, H
BALK, P
机构：
来源：
HETEROSTRUCTURES ON SILICON : ONE STEP FURTHER WITH SILICON | 1989年 / 160卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：45 / 50
页数：6
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