首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SURFACE-ORIENTED GAAS GUNN OSCILLATORS AND SCHOTTKY-BARRIER DIODES
被引:0
|
作者
:
WACKER, RW
论文数:
0
引用数:
0
h-index:
0
WACKER, RW
MAO, S
论文数:
0
引用数:
0
h-index:
0
MAO, S
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1968年
/ ED15卷
/ 06期
关键词
:
D O I
:
10.1109/T-ED.1968.16314
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:429 / &
相关论文
共 50 条
[41]
GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
CALVIELLO, JA
论文数:
0
引用数:
0
h-index:
0
CALVIELLO, JA
MICROWAVE JOURNAL,
1979,
22
(09)
: 92
-
&
[42]
THE SCHOTTKY-BARRIER OF SN ON GAAS(110)
MATTERNKLOSSON, M
论文数:
0
引用数:
0
h-index:
0
MATTERNKLOSSON, M
LUTH, H
论文数:
0
引用数:
0
h-index:
0
LUTH, H
SURFACE SCIENCE,
1985,
162
(1-3)
: 610
-
616
[43]
CHEMISTRY OF SCHOTTKY-BARRIER FORMATION ON GAAS
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,THOUSAND OAKS,CA 91360
ROCKWELL INT,THOUSAND OAKS,CA 91360
WALDROP, JR
GRANT, RW
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,THOUSAND OAKS,CA 91360
ROCKWELL INT,THOUSAND OAKS,CA 91360
GRANT, RW
JOURNAL OF ELECTRONIC MATERIALS,
1979,
8
(05)
: 731
-
731
[44]
FREQUENCY TRIPLERS AND QUADRUPLERS WITH GAAS SCHOTTKY-BARRIER DIODES AT 450 AND 600 GHZ
TAKADA, T
论文数:
0
引用数:
0
h-index:
0
TAKADA, T
OHMORI, M
论文数:
0
引用数:
0
h-index:
0
OHMORI, M
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1979,
27
(05)
: 519
-
523
[45]
EFFICIENCIES OF SCHOTTKY-BARRIER GAAS AND BOTH COMPLEMENTARY STRUCTURES OF SI IMPATT DIODES
TANTRAPORN, W
论文数:
0
引用数:
0
h-index:
0
机构:
GE RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE RES & DEV CTR, SCHENECTADY, NY 12301 USA
TANTRAPORN, W
YU, SP
论文数:
0
引用数:
0
h-index:
0
机构:
GE RES & DEV CTR, SCHENECTADY, NY 12301 USA
GE RES & DEV CTR, SCHENECTADY, NY 12301 USA
YU, SP
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1973,
ED20
(05)
: 492
-
496
[46]
CHANGES IN AU-GAAS SCHOTTKY-BARRIER DIODES WITH LOW NEUTRON FLUENCE
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BORREGO, JM
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GUTMANN, RJ
APPLIED PHYSICS LETTERS,
1976,
28
(05)
: 280
-
282
[47]
CURRENT TRANSPORT IN GAAS SCHOTTKY-BARRIER DIODES SUBJECT TO HIGH NEUTRON FLUENCE
ASHOK, S
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
ASHOK, S
BORREGO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
BORREGO, JM
GUTMANN, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181
GUTMANN, RJ
JOURNAL OF APPLIED PHYSICS,
1980,
51
(02)
: 1076
-
1084
[48]
DEEP LEVEL INVESTIGATION OF CR/NORMAL-GAAS SCHOTTKY-BARRIER DIODES
GOMBIA, E
论文数:
0
引用数:
0
h-index:
0
GOMBIA, E
MATERIALS CHEMISTRY AND PHYSICS,
1983,
9
(1-3)
: 315
-
320
[49]
SCHOTTKY-BARRIER BEHAVIOR IN POLYCRYSTAL GAAS
COHEN, MJ
论文数:
0
引用数:
0
h-index:
0
COHEN, MJ
PAUL, MD
论文数:
0
引用数:
0
h-index:
0
PAUL, MD
MILLER, DL
论文数:
0
引用数:
0
h-index:
0
MILLER, DL
WALDROP, JR
论文数:
0
引用数:
0
h-index:
0
WALDROP, JR
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
HARRIS, JS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1980,
17
(05):
: 899
-
903
[50]
GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
CALVIELLO, JA
论文数:
0
引用数:
0
h-index:
0
CALVIELLO, JA
MICROWAVE JOURNAL,
1979,
22
(08)
: 53
-
&
←
1
2
3
4
5
→