BRIGHT FIELD ALIGNMENT MARKS FOR OPTICAL LITHOGRAPHY

被引：0
|
作者：
ABLASSMEIER, U [1 ]
机构：
[1] SIEMENS AG,W-8000 MUNICH 83,GERMANY
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 01期
关键词：
OPTICAL LITHOGRAPHY; WAFER STEPPER; ALIGNMENT MARKS; REFLECTIVITY; CONTRAST GAAS;
D O I：
10.1016/0167-9317(91)90166-B
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wafer steppers in semiconductor manufacturing depend on failure-free pattern recognition for automatic wafer alignment. For this purpose, the principle of reflection contrast between an alignment mark and the neighbouring area on a semiconductor wafer was investigated. Good agreement between experimental results and theoretical calculations for all types of alignment marks were obtained, so that the process tolerances for safe machine operation could be derived.
引用
收藏
页码：59 / 70
页数：12
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