MARKS FOR ALIGNMENT AND REGISTRATION IN PROJECTION ELECTRON LITHOGRAPHY

被引：12

作者：

FARROW, RC

LIDDLE, JA

BERGER, SD

HUGGINS, HA

KRAUS, JS

CAMARDA, RM

TARASCON, RG

JURGENSEN, CW

KOLA, RR

FETTER, L

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期

关键词：

D O I：

10.1116/1.586451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article discusses the relevant criteria for selecting alignment marks for projection electron lithography. The mark material, topography, and pattern layout are considered. Results from experiments and calculations indicate that there is a wide range of acceptable mark configurations suitable for use with short beam dwell times. These results are based on analyses of the available backscattered electron signal and experimentally obtained detection accuracy within the nanometer range.

引用

页码：2175 / 2178

页数：4

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