P-I-N-DIODE ATTENUATOR WITH SMALL PHASE-SHIFT

被引：5
|
作者：
BAETEN, RJ [1 ]
ISHII, TK [1 ]
HYDE, JS [1 ]
机构：
[1] MARQUETTE UNIV,DEPT ELECT ENGN & COMP SCI,MILWAUKEE,WI 53233
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 04期
关键词：
CAPACITORS - ELECTRONIC CIRCUITS; PHASE CHANGER - SEMICONDUCTOR DIODES;
D O I：
10.1109/22.3592
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A computer-aided design technique for minimizing spurious phase shift in microstrip p-i-n diode attenuators is presented. At 9 GHz, a spurious phase shift of 0. 17 degree /dB attenuation has been realized at 15-dB attenuation. This is better than the previous reported value (H. Imai, 1974) of 1 degree /dB attenuation at comparable operating frequencies and attenuations. The diode mounting location and the DC blocking chip capacitors on microstrip are important, among other parameters, to minimize the spurious phase shift.
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页码：789 / 791
页数：3
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