P-I-N-DIODE ATTENUATOR WITH SMALL PHASE-SHIFT

被引：5

作者：

BAETEN, RJ ^{[1
]}

ISHII, TK ^{[1
]}

HYDE, JS ^{[1
]}

机构：

[1] MARQUETTE UNIV,DEPT ELECT ENGN & COMP SCI,MILWAUKEE,WI 53233

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 04期

关键词：

CAPACITORS - ELECTRONIC CIRCUITS; PHASE CHANGER - SEMICONDUCTOR DIODES;

D O I：

10.1109/22.3592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computer-aided design technique for minimizing spurious phase shift in microstrip p-i-n diode attenuators is presented. At 9 GHz, a spurious phase shift of 0. 17 degree /dB attenuation has been realized at 15-dB attenuation. This is better than the previous reported value (H. Imai, 1974) of 1 degree /dB attenuation at comparable operating frequencies and attenuations. The diode mounting location and the DC blocking chip capacitors on microstrip are important, among other parameters, to minimize the spurious phase shift.

引用

页码：789 / 791

页数：3

共 50 条

[1] COMMENTS ON P-I-N-DIODE ATTENUATOR WITH SMALL PHASE-SHIFT
LO, KW
VU, TB
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (11) : 1540 - 1540
[2] P-I-N-DIODE ATTENUATOR WITH SMALL PHASE-SHIFT - REPLY
VU, TB
LO, KW
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (10) : 1658 - 1658
[3] P-I-N-DIODE ATTENUATOR WITH SMALL PHASE-SHIFT - ADDITIONAL COMMENTS
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (10) : 1658 - 1659
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[5] CONTROLLABLE ATTENUATOR ON A BASE OF P-I-N-DIODE FOR MICROWAVE COAXIAL GENERATORS
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[7] GRAPH DESIGN OF P-I-N-DIODE PHASE SHIFTERS
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[10] CREEPING PHENOMENA IN P-I-N-DIODE
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