P-TYPE DILUTED MAGNETIC III-V SEMICONDUCTORS

被引：59

作者：

MUNEKATA, H ^{[1
]}

OHNO, H ^{[1
]}

RUF, RR ^{[1
]}

GAMBINO, RJ ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] HOKKAIDO UNIV, DEPT ELECT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91123-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Diluted magnetic III-V semiconductors In(1-x)Mn(x) As with p-type conduction have been successfully grown by molecular beam epitaxy under the specific growth conditions of substrate temperatures above 275-degrees-C with Mn compositions 0.001 less-than-or-similar-to x less-than-or-similar-to 0.03. No MnAs second phase was detected in these films in which the Mn ions serve the dual purpose of providing conduction holes and local spins. Hole concentrations fall in the range of 5 x 10(17) to 10(20) cm-3 depending on the Mn composition, and they can be varied with donor impurities such as Sn. Magnetotransport at low temperatures exhibits striking hysteretic characteristics, suggesting the occurrence of ferromagnetic order induced by the presence of holes.

引用

页码：1011 / 1015

页数：5

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